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PD - 95129
AUTOMOTIVE MOSFET
Features
l l l l l l
IRF3205ZPbF IRF3205ZSPbF IRF3205ZLPBF
HEXFET(R) Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free
VDSS = 55V RDS(on) = 6.5m
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
G S
ID = 75A
TO-220AB IRF3205ZPbF
D2Pak TO-262 IRF3205ZSPbF IRF3205ZLPBF Max.
110 78 75 440 170 1.1 20 W W/C V mJ A mJ -55 to + 175 C 300 (1.6mm from case ) 10 lbfyin (1.1Nym) A
Absolute Maximum Ratings
Parameter
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100C Continuous Drain Current, VGS @ 10V ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current IDM
Units
PD @TC = 25C Power Dissipation VGS EAS (Thermally limited) EAS (Tested ) IAR EAR TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
h
180 250 See Fig.12a, 12b, 15, 16
g i
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient
Typ.
Max.
0.90 --- 62 40
Units
C/W
i
i
--- 0.50 --- ---
Junction-to-Ambient (PCB Mount)
j
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1
3/18/04
IRF3205ZS/LPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
55 --- --- 2.0 71 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 0.051 4.9 --- --- --- --- --- --- 76 21 30 18 95 45 67 4.5 7.5 3450 550 310 1940 430 640 --- --- 6.5 4.0 --- 20 250 200 -200 110 --- --- --- --- --- --- --- nH --- --- --- --- --- --- --- pF ns nC nA V
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 66A V S A VDS = VGS, ID = 250A VDS = 25V, ID = 66A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ID = 66A VDS = 44V VGS = 10V VDD = 28V ID = 66A RG = 6.8 VGS = 10V
e
e e
Between lead, 6mm (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 28 25 75 A 440 1.3 42 38 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 66A, VGS = 0V TJ = 25C, IF = 66A, VDD = 25V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF3205ZS/LPbF
1000
TOP
VGS
ID, Drain-to-Source Current (A)
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
1000
TOP
VGS
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
ID, Drain-to-Source Current (A)
100
100
10
4.5V
1 0.1 1
20s PULSE WIDTH Tj = 25C
10 100
4.5V
10 0.1 1
20s PULSE WIDTH Tj = 175C
10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
120
Gfs, Forward Transconductance (S)
T J = 25C T J = 175C
T J = 175C 100 80 60 40 20 0 T J = 25C
ID, Drain-to-Source Current ( A)
100
10
1 4.0 5.0 6.0 7.0
VDS = 25V 20s PULSE WIDTH
8.0 9.0 10.0 11.0
VDS = 10V 20s PULSE WIDTH 0 20 40 60 80 100
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
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IRF3205ZS/LPbF
6000 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
20
VGS, Gate-to-Source Voltage (V)
ID= 66A VDS= 44V VDS= 28V VDS= 11V
5000
16
C, Capacitance (pF)
4000
Ciss
3000
12
8
2000
4
1000
Coss Crss
0 1 10 100
0 0 20 40 60 80 100 120 QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0
T J = 175C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100 100sec 10 1msec Tc = 25C Tj = 175C Single Pulse 1 10 10msec
10.0 T J = 25C 1.0
1
0.1 0.2 0.6 1.0 1.4
VGS = 0V 1.8 2.2
0.1
100
1000
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF3205ZS/LPbF
120 100
ID , Drain Current (A)
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
LIMITED BY PACKAGE
ID = 66A VGS = 10V
2.0
80 60 40 20 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
1.0
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10 0.05 0.02 0.01
0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006 1E-005 0.0001 0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF3205ZS/LPbF
EAS, Single Pulse Avalanche Energy (mJ)
15V
350 300 250 200 150 100 50 0 25 50 75 100 125 150
TOP BOTTOM
ID
27A 47A 66A
VDS
L
DRIVER
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
A
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
175
Starting T J, Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS
QGD
VGS(th) Gate threshold Voltage (V)
4.0
VG
3.0
ID = 250A
Charge
Fig 13a. Basic Gate Charge Waveform
2.0
L
0
DUT 1K
VCC
1.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRF3205ZS/LPbF
1000
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
Avalanche Current (A)
100
0.01 0.05
10
0.10
1
0.1 1.0E-08 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
200
EAR , Avalanche Energy (mJ)
160
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 66A
120
80
40
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF3205ZS/LPbF
Driver Gate Drive
D.U.T
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
VDS VGS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-VDD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
8
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IRF3205ZS/LPbF
TO-220AB Package Outline
10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240)
Dimensions are shown in millimeters (inches)
-B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
2.87 (.113) 2.62 (.103)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 1- GATE- DRAIN 1- GATE 32- DRAINSOURCE 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN
LEAD ASSIGNMENTS
HEXFET
14.09 (.555) 13.47 (.530)
4- DRAIN
4.06 (.160) 3.55 (.140)
4- COLLECTOR
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R
Note: "P" in assembly line position indicates "Lead-Free"
DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C
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9
IRF3205ZS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 8 0 24 AS S E M B L E D O N W W 0 2 , 2 0 0 0 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly line pos ition in dicates "L ead-F ree" IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L O T CO D E P AR T N U M B E R F 530S D AT E C O D E Y E AR 0 = 2 0 0 0 WE E K 02 L IN E L
OR
IN T E R N AT IO N AL R E C T IF IE R L O GO AS S E M B L Y L OT COD E P AR T N U M B E R F 530S D AT E CO D E P = D E S IG N AT E S L E AD - F R E E P R O D U C T (O P T IO N AL ) Y E AR 0 = 2 0 0 0 WE E K 02 A = AS S E M B L Y S IT E C O D E
10
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IRF3205ZS/LPbF
TO-262 Package Outline
IGBT 1- GATE 2- COLLECTOR 3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS S EMBLED ON WW 19, 1997 IN T HE AS S EMBLY LINE "C" Note: "P" in as s embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER
DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C
OR
INT ERNATIONAL RECTIFIER LOGO AS S EMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 7 = 1997 WEEK 19 A = AS S EMBLY S IT E CODE
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11
IRF3205ZS/LPbF
D2Pak Tape & Reel Infomation
TRR
1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153)
1.60 (.063) 1.50 (.059)
0.368 (.0145) 0.342 (.0135)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
11.60 (.457) 11.40 (.449)
15.42 (.609) 15.22 (.601)
24.30 (.957) 23.90 (.941)
TRL
10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178)
FEED DIRECTION
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) MAX.
60.00 (2.362) MIN.
NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039) 24.40 (.961) 3
30.40 (1.197) MAX. 4
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.08mH This value determined from sample failure population. 100% RG = 25, IAS = 66A, VGS =10V. Part not tested to this value in production. recommended for use above this value. This is only applied to TO-220AB pakcage. Pulse width 1.0ms; duty cycle 2%. This is applied to D2Pak, when mounted on 1" square PCB (FR Coss eff. is a fixed capacitance that gives the 4 or G-10 Material). For recommended footprint and soldering same charging time as Coss while VDS is rising techniques refer to application note #AN-994. from 0 to 80% VDSS . Repetitive rating; pulse width limited by Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101]market. Qualification Standards can be found on IR's Web site.
Notes:
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/04
12
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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